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| SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - OCTOBER 1995 7 C FZT491 COMPLEMENTARY TYPE PARTMARKING DETAIL FZT591 FZT491 B E C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Breakdown Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current Emitter Cut-Off Current ICBO IEBO MIN. 80 60 5 100 100 100 0.25 0.5 1.1 1.0 100 100 80 30 150 10 300 MHz pF SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg TYP. MAX. VALUE 80 60 5 2 1 200 2 -55 to +150 UNIT V V V nA nA nA V V V V CONDITIONS. IC=100A IC=10mA* IE=100A VCB=60V VEB=4V VCES=60V IC=500mA, IB =50mA* IC=1A, IB =100mA* IC=1A, IB=100mA* IC =1A, VCE =5V* IC=1mA, VCE =5V IC =500mA, VCE =5V* IC =1A, VCE =5V* IC = 2A, VCE =5V* IC=50mA, VCE=10V, f =100MHz VCB=10V, f=1MHz UNIT V V V A A mA W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). Collector-Emitter Cut-Off ICES Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current VCE(sat) VBE(sat) VBE(on) hFE Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse width=300s. For typical characteristics graphs see FMMT491 datasheet 3 - 189 |
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